Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Strained-Si heterostructure field effect transistors
The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...
متن کاملAtomistic Simulation of Nanowire Transistors
At the nanometer scale, the computer simulation of electronic transport cannot be conceived without including quantum-mechanical effects as well as the atomic granularity of the simulation domain. In this review we present a three-dimensional quantum transport simulator based on the sp3d5s∗ semi-empirical tight-binding (TB) method that fulfills these two requirements. The integration of the mul...
متن کاملAtomistic Simulation of Gate Effect on Nanoscale Intrinsic Si Field-effect Transistors
X. F. WANG∗,†,§, L. N. ZHAO∗, Z. H. YAO∗, Z. F. HOU∗, M. YEE∗, X. ZHOU‡, S. H. LIN‡ and T. S. LEE‡ ∗Atomistix Asia Pacific Pte Ltd (AAP), Unit 106 16 Nanyang Drive, NTU, Singapore 637722, Singapore †School of Materials Science and Engineering, NTU Nanyang Avenue, Singapore 639798, Singapore ‡School of Electrical and Electronic Engineering, NTU Nanyang Avenue, Singapore 639798, Singapore §xf wan...
متن کاملChapter 2 . Physics of InAIAs / InGaAs Heterostructure Field - Effect Transistors
The goal of this project is to develop InAIAs/InGaAs heterostructure field-effect transistors suitable for millimeter-wave high-power applications. The suitability of this material system for low-noise amplification is now unquestionable. Obtaining a high breakdown voltage is, however, still rather difficult, and it usually comes with severe trade offs. This fact seriously limits the suitabilit...
متن کاملQuantum mechanical solver for confined heterostructure tunnel field - effect transistors
Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2019
ISSN: 2168-6734
DOI: 10.1109/jeds.2019.2925402